| 2024 |
β-rays induced displacement damage on epitaxial 4H-SiC revealed by exciton recombination |
Articolo in rivista |
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| 2024 |
Defects in epitaxial 4H-SiC revealed by exciton recombination |
Articolo in rivista |
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| 2023 |
Effects of beta ray irradiation on 4H-SiC epitaxial layer probed by exciton recombination |
Abstract non pubblicato |
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| 2023 |
Response of epitaxial layer of 4H-SiC to β-rays and X-rays irradiation |
Abstract in atti di convegno pubblicato in volume |
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| 2023 |
Vulnerability of epitaxial layers and substrates of 4H-SiC to ionizing radiation and thermal treatments |
Abstract in atti di convegno pubblicato in volume |
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| 2023 |
Graphitization effects induced by thermal treatments of 4H-SiC |
Abstract in atti di convegno pubblicato in volume |
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| 2022 |
Comparison of the effects of electrons and X-rays irradiation on epitaxial layers of 4H-SiC |
Abstract in atti di convegno pubblicato in volume |
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| 2021 |
Substrate impact on the thickness dependence of vibrational and optical properties of large area MoS2produced by gold-assisted exfoliation |
Articolo in rivista |
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