Investigation on the Single Event Burnout threshold behaviour of Power MOSFETs under atmospheric-like neutron spectrum irradiation
- Autori: Marchese N; Solano A; Cazzaniga C; Frost C D; Tomarchio E; Pace C
- Anno di pubblicazione: 2017
- Tipologia: eedings
- OA Link: http://hdl.handle.net/10447/275404
Abstract
N-channel power MOSFETs were tested at ChipIr (ISIS-RAL) with atmospheric-like neutron spectrum. Voltage thresholds for Single Event Burnout were evaluated and their correlations with the devices characteristics (V(BR)DSS) were investigated.