Power losses comparison between Silicon Carbide and Silicon devices for an isolated DC-DC converter

Abstract

In recent years, new efficient power devices have been implemented. Silicon Carbide has replaced silicon as regards the production and the utilization of many devices, such as MOSFETs, diodes, IGBTs and many others. SiC devices are characterized by a low reverse recovery charge, high carrier saturation velocity, by which it is possible to work at high frequency, and high breakdown voltage. Thanks to the great thermal conductivity and the wide bandgap, these devices can operate at high temperature and reach high voltages and currents. What is important to stress is the fact that power losses in SiC devices are lower than the silicon ones. These are the reasons why these devices are utilized in a wide range of technological applications, including power electronics. In this paper, power losses in Si and SiC devices are evaluated in simulation and compared to each other. In order to demonstrate the remarkable advantages of the SiC devices over the silicon ones, a study which makes use of an isolated DC-DC converter has been conducted. As regards the proposed full-bridge converter, SiC and silicon MOSFETs and diodes, of whom some static and dynamic parameters are defined, are used in order to transfer power from a DC voltage supply to a load.