Optimization of impurity profile for p-n junction in heterostructures
- Authors: PANKRATOV E L; SPAGNOLO B
- Publication year: 2005
- Type: Articolo in rivista (Articolo in rivista)
- OA Link: http://hdl.handle.net/10447/11014
Abstract
We analyze the dopant diffusion in p-n-junction in heterostructure, by solving the diffusion equation with space-varying diffusion coefficient. For a step-wise spatial distribution we find the optimum annealing time to decrease the p-n-junction thickness and to increase the homogeneity of impurity concentration in p or n regions.