Dependence of the emission properties of the germanium lone pair center on Ge doping of silica
- Authors: Alessi, A; Agnello, S; Ouerdane, Y; Gelardi, FM
- Publication year: 2011
- Type: Articolo in rivista (Articolo in rivista)
- Key words: Ge-doped silica, point defects, structural properties
- OA Link: http://hdl.handle.net/10447/52420