Parametrical study of multilayer structures for CIGS solar cells
- Authors: Busacca, A; Rocca, V; Curcio, L; Parisi, A; Cino, AC; Pernice, R; Ando', A; Adamo, G; Tomasino, A; Palmisano, G; Stivala, S; Caruso, M; Cipriani, G; La Cascia, D; Di Dio, V; Ricco Galluzzo, G; Miceli, R
- Publication year: 2014
- Type: Contributo in atti di convegno pubblicato in volume
- OA Link: http://hdl.handle.net/10447/105297
Abstract
In this paper, a numerical analysis of relevant electrical parameters of multilayer structures for CIGS-based solar cells was carried out, employing the simulation software wxAMPS. In particular, we have focused on thin film cells having a ZnO:Al/ZnO/CdS/CIGS structure with a Molybdenum back contact. The aim of this work is to establish good theoretical reference values for an ongoing experimental activity, where our technology of choice is the single-step electrodeposition. In detail, we have analyzed how the main electrical properties change with the bang gap and the thickness of the absorber layer, for such a type of solar cell structure. Our results show that both efficiency and fill factor strongly depend on the energy gap. Instead, the absorber thickness plays a role up to a few microns, after which the cell parameters remain almost constant. As expected, the theoretical peak efficiency was found for a band gap value of 1.40 eV, corresponding to a Ga/(In+Ga) ratio of 0.66.