Characterization of Thin Passive Film-Electrolyte Junctions. The Amorphous Semiconductor (a-SC) Schottky Barrier Approach.

Abstract

A detailed study of the electronic properties of thin (< 20 nm) anodic TiO2 potentiostatically grown on titanium in two different solutions is presented. The results show that the nature of the anodizing solution affects the electronic properties of the anodic film and in particular the density of electronic state (DOS) distribution. Different DOS were derived from the experimental data analyzed according to the theory of amorphous semiconductor (a-SC) Schottky barrier. It is shown that the usual non-linear and frequency dependent Mott-Schottky plots are in agreement with expected theoretical behaviour of a-SC Schottky barrier. It is shown the importance of the DOS distribution in determining the frequency response of the junction which is also related to the electrical behaviour of anodic films as “thin” or “thick” in terms of the ratio between the space-charge region and oxide film thickness.