Evolution of Photo-induced defects in Ge-doped fiber/preform: influence of the drawing
- Autori: Alessi, A; Girard, S; Cannas, M; Agnello, S; Boukenter, A; Ouerdane, Y
- Anno di pubblicazione: 2011
- Tipologia: Articolo in rivista (Articolo in rivista)
- Parole Chiave: Fiber, silica, drawing, Ge-doping, defects, optical absorption, microluminescence, electron paramagnetic resonance
- OA Link: http://hdl.handle.net/10447/54227
Abstract
We have studied the generation mechanisms of two different radiation-induced point defects, the Ge(1) and Ge(2) centers, in a germanosilicate fiber and in its original preform. The samples have been investigated before and after X-ray irradiation using the confocal microscopy luminescence and the electron paramagnetic resonance techniques. Our experimental results show the higher radiation sensitivity of the fiber as compared to the perform and suggest a relation between Ge(1) and Ge(2) generation. To explain our data we have used different models, finding that the destruction probability of the Ge(1) and Ge(2) defects is larger in fiber than in preform, whereas the generation one is similar. Finally we found that the higher radiation sensitivity of the fiber at low doses is essentially related to the presence of germanium lone pair center generated by the drawing.