Effect of air on oxygen p-doped graphene on SiO2
- Autori: Piazza, A.; Giannazzo, F.; Buscarino, G.; Fisichella, G.; La Magna, A.; Roccaforte, F.; Cannas, M.; Gelardi, F.; Agnello, S.
- Anno di pubblicazione: 2016
- Tipologia: Articolo in rivista (Articolo in rivista)
- Parole Chiave: AFM; graphene doping; Raman; Si; SiO2; Electronic, Optical and Magnetic Materials; Condensed Matter Physics; Surfaces and Interfaces; Surfaces, Coatings and Films; Materials Chemistry2506 Metals and Alloys; Electrical and Electronic Engineering
- OA Link: http://hdl.handle.net/10447/216842
Abstract
Stability in ambient air or in vacuum-controlled atmosphere of molecular oxygen-induced p-type doping of graphene monolayer on SiO2 substrate on Si is investigated by micro-Raman spectroscopy and atomic force microscopy (AFM). The Raman 2D and G bands spectral positions and amplitude ratio are affected by the permanence in air atmosphere in a time scale of months whereas the vacuum safely maintains the doping effects determined through Raman bands. No morphological effects are induced by the doping and post-doping treatments. A reactivity of ambient molecular gas with stably trapped oxygen is suggested to induce the doping modification.