Characterization of the defect density states in MoOx for c-Si solar cell applications
- Authors: Scirè, D.; Macaluso, R.; Mosca, M.; Mirabella, S.; Gulino, A.; Isabella, O.; Zeman, M.; Crupi, I.
- Publication year: 2021
- Type: Articolo in rivista
- OA Link: http://hdl.handle.net/10447/514001
Abstract
Thin layers of MoOx have been deposited by thermal evaporation followed by post-deposition annealing. The density of states distributions of the MoOx films were extracted deconvoluting the absorption spectra, measured by a photothermal deflection spectroscopy setup, including the small polaron contribution. Results revealed a sub-band defect distribution centered 1.1 eV below the conduction band; the amplitude of this distribution was found to increase with post-deposition annealing temperature and film thickness.