Anomalous and normal Hall effect in hydrogenated amorphous Si prepared by plasma enhanced chemical vapor deposition
- Authors: Crupi, I.; Mirabella, S.; D'Angelo, D.; Gibilisco, S.; Grasso, A.; Di Marco, S.; Simone, F.; Terrasi, A.
- Publication year: 2010
- Type: Articolo in rivista (Articolo in rivista)
- OA Link: http://hdl.handle.net/10447/176674
Abstract
The double sign anomaly of the Hall coefficient has been studied in p -doped and n -doped hydrogenated amorphous silicon grown by plasma enhanced chemical vapor deposition and annealed up to 500 °C. Dark conductivity as a function of temperature has been measured, pointing out a conduction mechanism mostly through the extended states. Anomalous Hall effect has been observed only in the as-deposited n -doped film, disappearing after annealing at 500 °C, while p -doped samples exhibit normal Hall effect. When Hall anomaly is present, a larger optical band gap and a greater Raman peak associated with Si-H bond are measured in comparison with the cases of normal Hall effect. The Hall anomaly will be related to the hydrogen content and implication on photovoltaic applications will be discussed. © 2010 American Institute of Physics.