Nanocrystal MOS with silicon-rich oxide
- Autori: Crupi, I.; Lombardo, S.; Gerardi, C.; Fazio, B.; Vulpio, M.; Rimini, E.; Melanotte, M.
- Anno di pubblicazione: 2002
- Tipologia: eedings
- OA Link: http://hdl.handle.net/10447/179620
Abstract
By electrical measurements we investigate the charge trapping and the charge transport in MOS capacitors in which the gate oxide has been replaced with a silicon rich oxide (SRO) film sandwiched between two thin SiO2 layers.