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ENRICO CALANDRA

Microwave characterization and modeling of packaged HEMTs by a direct extraction procedure at cryogenic temperatures

  • Authors: DONATO, N; CADDEMI, A; CRUPI, G; CALANDRA, E
  • Publication year: 2004
  • Type: eedings
  • Key words: Microwave Characterization, Small Signal Modeling, Low-Noise Devices, Cryogenic Temperatures, Cold FET.
  • OA Link: http://hdl.handle.net/10447/29903

Abstract

In the present work we employ a direct extraction procedure to determine small signal equivalent circuit of microwave GaAs FETs by means of scattering (S-) parameter measurements down to cryogenic temperatures. The direct extraction procedure was tested on packaged AlGaAs/InGaAs HEMTs and good agreement between the simulated and measured S-parameters was obtained at different bias and temperature conditions. We employed a properly designed cryogenic set-up operating in our laboratory that allows to perform DC and RF characterization down to 30 K.