Deposition of tin sulfide thin films from tin(IV) thiolate precursors
- Authors: Barone G.; Hibbert T.G.; Mahon M.F.; Molloy K.C.; Price L.S.; Parkin I.P.; Hardy A.M.E.; Field M.N.
- Publication year: 2001
- Type: Articolo in rivista
- OA Link: http://hdl.handle.net/10447/513802
Abstract
AACVD (aerosol-assisted chemical vapour deposition) using (PhS)4Sn as precursor leads to the deposition of Sn3O4 in the absence of H2S and tin sulfides when H2S is used as co-reactant. At 450°C the film deposited consists of mainly SnS2 while at 500°C SnS is the dominant component. The mechanism of decomposition of (PhS)4Sn is discussed and the structure of the precursor presented.