Charge Sharing and Cross Talk Effects in High-Z and Wide-Bandgap Compound Semiconductor Pixel Detectors
- Authors: Buttacavoli A.; Principato F.; Gerardi G.; Bettelli M.; Veale M.C.; Abbene L.
- Publication year: 2023
- Type: Capitolo o Saggio
- OA Link: http://hdl.handle.net/10447/593073
Abstract
Intense research activities have been made in the development of high-Z and wide-bandgap compound semiconductor pixel detectors for the next generation X-ray and gamma ray spectroscopic imagers. Cadmium telluride (CdTe) and cadmium-zinc-telluride (CdZnTe or CZT) pixel detectors have shown impressive performance in X-ray and gamma ray detection from energies of few keV up to 1 MeV. Charge sharing and cross-talk phenomena represent the typical drawbacks in sub-millimeter pixel detectors, with severe distortions in both energy and spatial resolution. In this chapter, we review the effects of these phenomena on the response of CZT/CdTe pixel detectors, with particular emphasis on the current state of the art of the discrimination/correction techniques. The results from original energy-recovery procedures of multiple charge sharing events, recently developed by our group, are also shown.